LGE mmbt2907a sot-23 free download

File name mmbt2907a_sot-23.pdf

MMBT2907A SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Dissipation 0.225 W TJ Junction Temperature 150 Tstg Storage Temperature -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -20 nA Collector cut-off current ICE0 VCE=-30V,VEB(0ff)=-0.5V -50 nA Emitter cut-off current IEBO VEB=-3V,IC=0 -10 nA hFE(1) VCE=-10V,IC=-0.1mA 75 hFE(2) VCE=-10V,IC=-1mA 100 DC current gain hFE(3) VCE=-10V,IC=-10mA 100 hFE(4) VCE=-10V,IC=-150mA 100 300 hFE(5) VCE=-10V,IC=-500mA 50 VCE(sat) IC=-150mA,IB=-15mA -0.4 V Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -1.6 V